FDY2001PZ Datasheet | Fairchild Semiconductor

Description This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = - 2.5v. Features - - 150 m A, - 20 V RDS(ON) = 8 Ω @ VGS = - 4.5 V RDS(ON) = 12Ω @ VGS = - 2.5 V - ESD protection diode (note 3) - Ro HS pliant Applications - Li-Ion Battery Pack S1 G1 1 2 3 6 5 4 D1 G2 S2 D2 TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) (Note 1a) 1a) Ratings - 20 ±8 - 150 - 1000 625 446 - 55 to +150 Units V V m A m W °C (Note 1a) 1a) (Note 1b)...