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FDY2001PZ - Dual P-Channel Specified PowerTrench MOSFET

General Description

This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS =

2.5v.

Key Features

  • 150 mA,.
  • 20 V RDS(ON) = 8 Ω @ VGS =.
  • 4.5 V RDS(ON) = 12Ω @ VGS =.
  • 2.5 V.
  • ESD protection diode (note 3).
  • RoHS Compliant.

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www.DataSheet4U.com January 2006 FDY2001PZ Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET FDY2001PZ Dual P-Channel (– 2.5V) Specified PowerTrench® MOSFET General Description This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = – 2.5v. Features • – 150 mA, – 20 V RDS(ON) = 8 Ω @ VGS = – 4.5 V RDS(ON) = 12Ω @ VGS = – 2.