FDY2001PZ Description
This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v.
FDY2001PZ Key Features
- 150 mA
- 20 V RDS(ON) = 8 Ω @ VGS =
- 4.5 V RDS(ON) = 12Ω @ VGS =
- ESD protection diode (note 3)
- RoHS pliant