FDY102PZ Datasheet | Fairchild Semiconductor

Features General Description - Max r DS(on) = 0.5 Ω at VGS = - 4.5 V, ID = - 0.83 A - Max r DS(on) = 0.7 Ω at VGS = - 2.5 V, ID = - 0.70 A - Max r DS(on) = 1.2 Ω at VGS = - 1.8 V, ID = - 0.43 A - Max r DS(on) = 1.8 Ω at VGS = - 1.5 V, ID = - 0.36 A - HBM ESD protection level = 1400 V (Note 3) - Ro HS pliant This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the r DS(on)@VGS = - 1.5 V. Application - Li-Ion Battery Pack D SC89-3 G1 S2 3D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal...