FDY2000PZ Description
This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v.
FDY2000PZ Key Features
- 350 mA
- 20 V RDS(ON) = 1.2 Ω @ VGS =
- 4.5 V RDS(ON) = 1.6 Ω @ VGS =
- ESD protection diode (note 3)
- RoHS pliant