FDY101PZ Datasheet | Fairchild Semiconductor

Description Features This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = - 2.5v. IGN Applications ES - Li-Ion Battery Pack - - 150 m A, - 20 V RDS(ON) = 8 Ω @ VGS = - 4.5 V RDS(ON) = 12 Ω @ VGS = - 2.5 V - ESD protection diode (note 3) - Ro HS pliant UER NDEW D 1S O i G 1 INED F nsem TION G NOMTMETNYDOUINRFo ORMA D S2 COT RECNTAC FOR Absolute Maximum Ratings TA=25o C unless otherwise noted NO CO IVE Symbol Parameter ISIS E T VDSS S TA VGSS D ICE EA N ID DEV PL RESE PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) (Note 1a) (Note 1a) (Note 1b) THIS REP TJ, TSTG Operating and Storage Junction Temperature Range Ratings - 20 ±8 - 150 - 1000 625 446 - 55 to +150 3D Units V V m A m W °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note...