FDY100PZ Datasheet | Fairchild Semiconductor

Description This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = - 2.5v. Features - - 350 m A, - 20 V RDS(ON) = 1.2 Ω @ VGS = - 4.5 V RDS(ON) = 1.6 Ω @ VGS = - 2.5 V - ESD protection diode (note 3) - Ro HS pliant Applications - Li-Ion Battery Pack 1 S G D Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG TA=25o C unless otherwise noted 1 3 D Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed (Note 1a) 1a) Ratings - 20 ±8 - 350 - 1000 625 446 - 55 to +150 Unit s V V m A m W °C Power Dissipation (Steady State) (Note 1a) 1a) (Note 1b) 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) (Note 1b) 1b) 200...