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FDY4001CZ - Complementary N & P-Channel PowerTrench MOSFET

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FDY4001CZ Product details

Description

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V. Level shifting Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA Max rDS(on) = 12Ω at VGS = -2.5V, ID = -125mA Max rDS(on) = 15Ω at VGS = -1.8V, ID = -100mA

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