FDZ4670 N-Channel MOSFET

Fairchild Semiconductor

Description

FDZ4670 N-Channel PowerTrench®MOSFET BGA May 2007 FDZ4670 N-Channel PowerTrench®MOSFET BGA 30V, 25A, 2.5mΩ tm .
Combining Farichild’s 30V PowerTrench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and rDS(on) .

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Datasheet Specifications

Part number: FDZ4670
Manufacturer: Fairchild Semiconductor
File Size: 213.99 KB
Datasheet: FDZ4670-FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A
* Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A
* Ultra-thin package: less than 0.85mm height when mounted to PCB
* Outstanding thermal transfer characteristics
* Ultra-low gate charge x rDS(on) product
* Ro

Applications

* DC - DC Conversion
* POL converters Index slot D G Bottom Top FLFBGA 3.5X4.0 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Po

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FDZ4670 N-Channel MOSFET Fairchild Semiconductor

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