FDZ4670S Datasheet (Fairchild Semiconductor)

FDZ4670S, N-Channel MOSFET

Combining Fairchild's 30V PowerTrench® process with state-of-the-art BGA packaging, the FDZ4670S minimizes both PCB space and rDS(on).

This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling

FDZ4670S Features

* Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A

* Max rDS(on) = 4.0mΩ at VGS = 4.5V, ID = 19A

* Ultra-thin package: less than 0.85mm height when mounted to PCB

* Outstanding thermal transfer characteristics

* Ultra-low gate charge x rDS(on) product

* RoHS