Datasheet Details
| Part number | FGA70N33BTD |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 241.83 KB |
| Description | 70A PDP IGBT |
| Download | FGA70N33BTD Download (PDF) |
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| Part number | FGA70N33BTD |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 241.83 KB |
| Description | 70A PDP IGBT |
| Download | FGA70N33BTD Download (PDF) |
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Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
C GCE TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES ICpulse(1)* IC pulse(2)* PD VRRM IF(AV) IFSM Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current @ TC = 25oC Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 25oC @ TC = 100oC Peak Repetitive Reverse Voltage of Diode Average Rectified Forward Current of diode @ TC = 100oC Non-repetitive Peak Surge Current of diode 60Hz Single Half-Sine wave TJ, Tstg TL Operating Junction Temperature and Storage Temperrature Maximum Lead Temp.
for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D< 0.01, pluse width < 5usec *IC_pulse limited by max Tj ©2011 Fairchild Semiconductor Corporation FGA70N33BTD Rev.
FGA70N33BTD 330V, 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT.
| Part Number | Description |
|---|---|
| FGA70N30T | 70A PDP IGBT |
| FGA70N30TD | 70A PDP IGBT |
| FGA120N30D | 300V PDP IGBT |
| FGA15N120AN | NPT Igbt |
| FGA15N120AND | IGBT |
| FGA15N120ANTD | 1200V NPT Trench IGBT |
| FGA15N120ANTDTU | IGBT |
| FGA15N120FTD | 15A Field Stop Trench IGBT |
| FGA15S125P | IGBT |
| FGA180N30D | 300V PDP IGBT |