FGA70N33BTD Description
Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. C GCE TO-3P Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES ICpulse(1) IC pulse(2) PD VRRM IF(AV) IFSM Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current @ TC = 25oC Pulsed Collector...
FGA70N33BTD Key Features
- High current capability
- Low saturation voltage: VCE(sat) =1.7V @ IC = 70A
- High input impedance
- Fast switching
- RoHS pliant