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FJB102

High Voltage Power Darlington Transistor

FJB102 Features

* High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum)

* Low Collector-Emitter Saturation Voltage Equivalent Circuit C B 1 D2-PAK 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJB102TM Top Mark FJB102 R1 3 ≅ LΩ 3 ≅ LΩ R2 E Package TO-263 2

FJB102 Datasheet (226.66 KB)

Preview of FJB102 PDF

Datasheet Details

Part number:

FJB102

Manufacturer:

Fairchild Semiconductor

File Size:

226.66 KB

Description:

High voltage power darlington transistor.

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FJB102 High Voltage Power Darlington Transistor Fairchild Semiconductor

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