FJB102 High Voltage Power Darlington Transistor

Fairchild Semiconductor

Description

FJB102 * NPN High-Voltage Power Darlington Transistor December 2014 FJB102 NPN High-Voltage Power Darlington Transistor .

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Datasheet Specifications

Part number: FJB102
Manufacturer: Fairchild Semiconductor
File Size: 226.66 KB
Datasheet: FJB102-FairchildSemiconductor.pdf
Description: High Voltage Power Darlington Transistor

Features

* High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum)
* Low Collector-Emitter Saturation Voltage Equivalent Circuit C B 1 D2-PAK 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJB102TM Top Mark FJB102 R1 3 ≅ LΩ 3 ≅ LΩ R2 E Package TO-263 2

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