FJPF9020 Datasheet (Fairchild Semiconductor) - PNP Epitaxial Darlington Transistor

FJPF9020, PNP Epitaxial Darlington Transistor

FJPF9020 FJPF9020 Monolithic Construction With Built In Base-Emitter Shunt Resistors High Collector-Base Breakdown Voltage : BVCBO = -550V High DC Current Gain : hFE = 550 @ VCE = -4V, IC = -1A (Typ.) Industrial Use 1 TO-220F 2.Collector 3.Emitter 1.Base PNP Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage