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FJP13009 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor FJP13009 .
Collector. Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min. Collector Saturation Voltage : VCE(sat) = 1. Mi.

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Datasheet Specifications

Part number
FJP13009
Manufacturer
INCHANGE
File Size
228.69 KB
Datasheet
FJP13009-INCHANGE.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

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