FMM6G50US60
Fairchild Semiconductor
0.99MB
Compact & complex module. Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the a
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FMM6G30US60 - Compact & Complex Module
(Fairchild Semiconductor)
..
FMM6G30US60
IGBT
FMM6G30US60
Compact & Complex Module
General Description
Fairchild IGBT Power Module provides low conduction an.
FMM60-02TF - N-Channel Power MOSFET
(IXYS)
Advance Technical Information
Trench Gate HiperFET N-Channel Power MOSFET
Phase Leg Topology
FMM60-02TF
33
T1
55 44
T2
11 22
VDSS =
ID25 = ≤ RDS(on.
FMM65-015P - Trench Power MOSFET
(IXYS Corporation)
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Advanced Technical Information
Trench Power MOSFET
-Phaseleg Topologyin ISOPLUS i4-PACTM
FMM 65-015P ID25
VDSS RDSon
T1
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FMM-22R - Silicon Diode
(Sanken)
SANKEN ELECTRIC CO., LTD.
FMM-22S/R
1 Scope The present specifications shall apply to an FMM-22S/R.
2 Outline
Type
Silicon Diode
Structure
Resi.
FMM-22S - Silicon Diode
(Sanken)
SANKEN ELECTRIC CO., LTD.
FMM-22S/R
1 Scope The present specifications shall apply to an FMM-22S/R.
2 Outline
Type
Silicon Diode
Structure
Resi.
FMM-24R - Rectifier Diodes
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FMM-24S - Rectifier Diodes
(Sanken electric)
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FMM-26R - Rectifier Diodes
(Sanken electric)
SANKEN ELECTRIC CO., LTD.
1 Scope The present specifications shall apply to Sanken silicon diode, FMM-26S/R.
2 Outline Type Structure Applications
S.
FMM-26S - Rectifier Diodes
(Sanken electric)
SANKEN ELECTRIC CO., LTD.
1 Scope The present specifications shall apply to Sanken silicon diode, FMM-26S/R.
2 Outline Type Structure Applications
S.
FMM-31R - Rectifier Diodes
(Sanken electric)
Rectifier Diodes
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Single Shot
Electrical Characteristics (Ta = 25°C) Tj.
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