* z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z Low QG z Low Drain-to-Tab capacitance z Low package inductance Advantages z Low gate drive requirement z High power density z Fast intrinsic recti
FMM60-02TF Datasheet (95.97 KB)
FMM60-02TF
IXYS
95.97 KB
N-channel power mosfet.
Advance Technical Information
Trench Gate HiperFET N-Channel Power MOSFET
Phase Leg Topology
FMM60-02TF
33
T1
55 44
T2
11 22
VDSS =
ID25 = ≤ RDS(on.
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