* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Avalanche Rated z Low QG z Low Drain-to-Tab capacitance z Low package inductance Advantages z Low Gate Drive RRequirement z High power density z Fast Intrinsic Rect
FMM50-025TF Datasheet (96.50 KB)
FMM50-025TF
IXYS
96.50 KB
Power mosfet.
Preliminary Technical Information Trench Gate HiperFET Power MOSFET Phase Leg Topology N-Channel FMM50-025TF 33 T1 55 44 T2 11 22 VDSS = ID25 = ≤ R.
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