* z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V Electrical Isolation z Avalanche Rated z Low QG z Low Drain-to-Tab capacitance z Low package inductance Advantages z Low Gate Drive RRequirement z High power density z Fast Intrinsic Rect
FMM50-025TF Datasheet (96.50 KB)
FMM50-025TF
IXYS
96.50 KB
Power mosfet.
Preliminary Technical Information
Trench Gate HiperFET Power MOSFET
Phase Leg Topology N-Channel
FMM50-025TF
33
T1
55 44
T2
11 22
VDSS =
ID25 = ≤ R.
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