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FQA10N80C_F109 N-Channel QFET MOSFET

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Description

FQA10N80C_F109 * N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 10 A, 800 V, RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 5 A
* Low Gate Charge (Typ. 44 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested

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📁 Related Datasheet

FQA10N80C-F109 FQA11N90-F109 FQA11N90C-F109 FQA13N80-F109 FQA140N10 FQA020ADC-007-M

📌 All Tags

FQA10N80C_F109 N-Channel QFET MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQA10N80C_F109-like datasheet
FQA10N80C
FQA10N80
FQA10N60C
FQA11N40
FQA11N90