FQA10N80C_F109 Datasheet | Fairchild Semiconductor

- N-Channel QFET® MOSFET N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features - 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A - Low Gate Charge (Typ. 44 n C) - Low Crss (Typ. 15 p F) - 100% Avalanche Tested - Ro HS pliant March 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. TO-3PN MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS IDM VGSS EAS IAR EAR dv/dt TJ, TSTG Parameter Drain to Source Voltage Drain Current Drain Current -Continuous (TC = 25o C) -Continuous (TC = 100o C) - Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate above 25o C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5...