FQA10N80C_F109 Datasheet PDF (N-Channel QFET MOSFET) | Download Fairchild Semiconductor FQA10N80C

FQA10N80C_F109 - N-Channel QFET MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

10 A, 800 V, RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 5 A.
Low Gate Charge (Typ. 44 nC).
Low Crss (Typ. 15 pF).
100% Avalanche Tested.
RoHS compliant March 2014.

Datasheet Details

Part number	FQA10N80C_F109
Manufacturer	Fairchild Semiconductor
File Size	973.12 KB
Description	N-Channel QFET MOSFET
Datasheet	FQA10N80C_F109 Datasheet
Additional preview pages of the FQA10N80C_F109 datasheet.

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Full PDF Text Transcription

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FQA10N80C_F109 — N-Channel QFET® MOSFET FQA10N80C_F109 N-Channel QFET® MOSFET 800 V, 10 A, 1.1 Ω Features • 10 A, 800 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5 A • Low Gate Charge (Typ. 44 nC) • Low Crss (Typ. 15 pF) • 100% Avalanche Tested • RoHS compliant March 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Published: Feb 23, 2016 |