FQP30N06L
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Key Features
- 32 A, 60 V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 16 A
- Low Gate Charge (Typ. 15 nC)
- Low Crss (Typ. 50 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
