FQP4N90C Datasheet (Fairchild Semiconductor)

FQP4N90C, 900V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQP4N90C Features

* 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A

* Low Gate Charge (Typ. 17 nC)

* Low Crss (Typ. 5.6 pF)

* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS