Fairchild Semiconductor FQP4N20L
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.| Part No. | FQP4N20L |
|---|---|
| Datasheet | FQP4N20L Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.FEATURES
● 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A● Low Gate Charge (Typ. 4.0 nC)
● Low Crss (Typ. 6.0 pF)
● 100% Avalanche Tested D GDS TO-220 G
ABSOLUTE MAXIMUM RATINGS
TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) PD Power Dissipation (TC = 25°C) - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Typ.
