Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max. ) @ VGS = 10 V, ID = 1.9 A.
- Low Gate Charge (Typ. 4.0 nC).
- Low Crss (Typ. 6.0 pF).
- 100% Avalanche Tested
D
GDS
TO-220
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Parameter Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repet.
FQP4N20L Datasheet
