FQP4N20L
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes.
- 3.8 A, 200 V, RDS(on) = 1.35 Ω (Max.) @ VGS = 10 V, ID = 1.9 A
- Low Gate Charge (Typ. 4.0 nC)
- Low Crss (Typ. 6.0 pF)
- 100% Avalanche Tested
- GDS TO-220 G
