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FQP7N10 Datasheet - Fairchild Semiconductor

FQP7N10 100V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the .

FQP7N10 Features

* 7.3A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " "

FQP7N10_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQP7N10

Manufacturer:

Fairchild Semiconductor

File Size:

537.94 KB

Description:

100v n-channel mosfet.

FQP7N10 Distributor

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FQP7N10 FQP7N10 100V N-Channel MOSFET Fairchild Semiconductor