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FQP10N20C - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-220 packaging.
  • High speed switching.
  • Very high commutation ruggedness.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

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Datasheet preview – FQP10N20C

Datasheet Details

Part number FQP10N20C
Manufacturer INCHANGE
File Size 202.99 KB
Description N-Channel MOSFET
Datasheet download datasheet FQP10N20C Datasheet
Additional preview pages of the FQP10N20C datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconductor FQP10N20C ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 9.5 6.
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