FQP10N60C Datasheet, Mosfet, Fairchild Semiconductor

FQP10N60C Features

• Mosfet
• 9.5 A, 600 V, RDS(on) = 730 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
• Low Gate Charge (Typ. 44 nC)
• Low Crss (Typ. 18 pF)
• 100% Avalanche Tested D GDS

PDF File Details

Part number:

FQP10N60C

Manufacturer:

Fairchild Semiconductor

File Size:

1.30MB

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📄 Datasheet

Description:

600v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

TAGS

FQP10N60C

Fairchild Semiconductor

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