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FQP10N60C - 600V N-Channel MOSFET

FQP10N60C Description

FQP10N60C / FQPF10N60C * N-Channel QFET® MOSFET November 2013 FQP10N60C / FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Descriptio.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQP10N60C Features

* 9.5 A, 600 V, RDS(on) = 730 mΩ (Max. ) @ VGS = 10 V, ID = 4.75 A
* Low Gate Charge (Typ. 44 nC)
* Low Crss (Typ. 18 pF)
* 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID

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600V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP10N60C-like datasheet