FQP13N10 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP13N10 *.

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Datasheet Specifications

Part number: FQP13N10
Manufacturer: INCHANGE
File Size: 235.51 KB
Datasheet: FQP13N10-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain Source Voltage- : VDSS= 100V(Min)
* Static Drain-Source On-Resistance : RDS(on) ≤180mΩ@VGS = 10V
* Fast Switching
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 12.8 9.05 51.2 PD Total Dissipation 65 Tj Operating Junction T

FQP13N10 Distributors

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FQP13N10 N-Channel MOSFET INCHANGE

INCHANGE FQP13N10-like datasheet