FQP13N10L - N-Channel MOSFET

Inchange Semiconductor

Key Features

With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

FQP13N10L n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	FQP13N10L
Manufacturer	Inchange Semiconductor
File Size	202.45 KB
Description	N-Channel MOSFET
Datasheet	FQP13N10L Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor FQP13N10L ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 12.8 9.05 51.2 PD Total Dissipation 65 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.31 62.