Datasheet Summary
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
- Features
- Drain Source Voltage-
: VDSS= 100V(Min)
- Static Drain-Source On-Resistance
: RDS(on) ≤180mΩ@VGS = 10V
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATIONS
- Switching applications
-...
