FQPF27P06 60V P-Channel MOSFET

Fairchild Semiconductor

Description

FQPF27P06 P-Channel MOSFET FQPF27P06 P-Channel QFET® MOSFET -60 V, -17 A, 26 mΩ March 2013 .
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQPF27P06
Manufacturer: Fairchild Semiconductor
File Size: 730.12 KB
Datasheet: FQPF27P06_FairchildSemiconductor.pdf
Description: 60V P-Channel MOSFET

Features

* -17 A, -60 V, RDS(on)=26 mΩ(Max. ) @VGS=-10 V, ID=-8.5 A
* Low Gate Charge (Typ. 33 nC)
* Low Crss (Typ. 120 pF)
* 100% Avalanche Tested
* 175°C Maximum Junction Temperature Rating GD S TO-220F G! Absolute Maximum Ratings TC = 25°C unless otherwise noted

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FQPF27P06 60V P-Channel MOSFET Fairchild Semiconductor

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