FQPF27P06 Datasheet - Fairchild Semiconductor

FQPF27P06 60V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy.

FQPF27P06 Features

* -17 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-8.5 A

* Low Gate Charge (Typ. 33 nC)

* Low Crss (Typ. 120 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating GD S TO-220F G! Absolute Maximum Ratings TC = 25°C unless otherwise noted

FQPF27P06_FairchildSemiconductor.pdf