FQPF65N06 - 60V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF65N06
Manufacturer	Fairchild Semiconductor
File Size	456.83 KB
Description	60V N-Channel MOSFET
Datasheet	FQPF65N06_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

40 A, 60 V, RDS(on) = 16 mΩ (Max. ) @ VGS = 10 V, ID = 20 A.
Low Gate Charge (Typ. 48 nC).
Low Crss (Typ. 100 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source.

📁 FQPF65N06 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |