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FQPF12N60C - N-Channel MOSFET

FQPF12N60C Description

isc N-Channel Mosfet Transistor *.

FQPF12N60C Features

* Drain Current
* ID= 12A@ TC=25℃
* Drain Source Voltage- : VDSS= 600V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Designed for

FQPF12N60C Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
FQPF12N60C
Manufacturer
INCHANGE
File Size
219.65 KB
Datasheet
FQPF12N60C-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FQPF12N60C-like datasheet