FQPF9N90C N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.
RDS(on) = 1. Fast Switching Speed. 100% Avalanche Tested. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: FQPF9N90C
Manufacturer: INCHANGE
File Size: 227.74 KB
Datasheet: FQPF9N90C-INCHANGE.pdf
Description: N-Channel MOSFET

Applications

* General purpose power amplifier
* ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A ID(puls) Pulse Drain Current Ptot Total Dissipation@TC=25℃ 36 A

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FQPF9N90C N-Channel MOSFET INCHANGE

INCHANGE FQPF9N90C-like datasheet