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FQPF9N25C

N-Channel QFET MOSFET

FQPF9N25C Features

* 8.8 A, 250 V, RDS(on) = 430 mΩ (Max.) @ VGS = 10 V, ID = 4.4 A

* Low Gate Charge (Typ. 26.5 nC)

* Low Crss (Typ. 45.5 pF)

* 100% Avalanche Tested Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,

FQPF9N25C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQPF9N25C Datasheet (456.25 KB)

Preview of FQPF9N25C PDF

Datasheet Details

Part number:

FQPF9N25C

Manufacturer:

Fairchild Semiconductor

File Size:

456.25 KB

Description:

N-channel qfet mosfet.

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TAGS

FQPF9N25C N-Channel QFET MOSFET Fairchild Semiconductor

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