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FQPF9N30 Datasheet - Fairchild Semiconductor

FQPF9N30 - 300V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQPF9N30 Features

* 6.0A, 300V, RDS(on) = 0.45Ω @VGS = 10 V Low gate charge ( typical 17 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings

FQPF9N30_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQPF9N30

Manufacturer:

Fairchild Semiconductor

File Size:

661.03 KB

Description:

300v n-channel mosfet.

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