300V Datasheet | Specifications & PDF Download

60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv

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SFA66UP30DN Ultrafast Dual Diode SFA66UP30DN 66A, 300V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: Trr=49ns (max) • Typical Forward Volt

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Description V X / Mob:15919711751 ASC20N3300MT4 3300V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

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SVF31N30CS 31A, 300V N SVF31N30CS N MOS F-CellTM VDMOS 。 、 。 AC-DC ，DC-DC ， H PWM 。  31A，300V，RDS(on)(typ.)=90m@VGS=10V    

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FDA59N30 — N-Channel UniFETTM MOSFET FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5

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Features  BVCEO > -300V  IC = -1A High Continuous Collector Current  ICM = -2A Peak Pulse Current  Low Saturation Voltage VCE(sat) < -240mV @ -1A

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FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V,

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http://www.fujielectric.com/products/semiconductor/ 2MBI300VH-120-50 IGBT MODULE (V series) 1200V / 300A / 2 in one package Features High speed swi

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http://www.fujielectric.com/products/semiconductor/ 6MBP300VEA060-50 IGBT Modules IGBT MODULE (V series) 600V / 300A / IPM Features • Temperature

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UNISONIC TECHNOLOGIES CO., LTD 05N30 0.5A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 05N30 is a N-channel mode power MOSFET using UTC’s advanc

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UNISONIC TECHNOLOGIES CO., LTD 10N30 Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET usi

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STTH2003 Datasheet 300 V ultrafast rectifier A1 A2 K K A2 A1 K TO-220AB K A2 K A1 TO-220FPAB A2 A1 K I2PAK KK A2 A1 D2PAK A2 A1 Product status

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UNISONIC TECHNOLOGIES CO., LTD 4N30Z 4A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The U TC 4N30Z is an N-ch annel mod e p ower MOSF ET

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Features • BVCEO > -300V • IC = -0.5A Continuous Current • ICM = -1A Peak Pulse Current • Complementary NPN Type: FZT657 • Lead-Free Finish; RoHS Comp

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STTH2003 Datasheet 300 V ultrafast rectifier A1 K A2 K A2 A1 K TO-220AB K A2 K A1 TO-220FPAB A2 A1 K I2PAK K K A2 A1 D2PAK A2 A1 Product stat

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NP12N30G 300V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS

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FMMTA92 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features  BVCEO > -300V  IC = -200mA High Continuous Collector Current  Complementary Type – FMM

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