300V Datasheet | Specifications & PDF Download

60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv

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FDA59N30 — N-Channel UniFETTM MOSFET FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5

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Description V X / Mob:15919711751 ASC20N3300MT4 3300V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a completely new technology that provide su

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Type CGS High-Cap Screw Terminal Aluminum Electrolytic Capacitor High CV, Screw Terminal Capacitors Type CGS screw terminal, aluminum electrolytic cap

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SFA66UP30DN Ultrafast Dual Diode SFA66UP30DN 66A, 300V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: Trr=49ns (max) • Typical Forward Volt

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NP12N30G 300V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS

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www.DataSheet4U.com KMX Series MINIATURE -105؇ C Ⅲ Miniature Ⅲ Low Impedance Ⅲ Long Life Ⅲ For Electronic Ballasts Ⅲ‫؀‬ 105؇C Maximum Temperature D

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www.DataSheet4U.com FGA120N30D 300V PDP IGBT June 2006 FGA120N30D 300V PDP IGBT Features • High Current Capability • Low saturation voltage: VCE(sa

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PST Technical Data : RC-011 Page 1 of 3 KN400/1300V Fast Switching Reverse-conducting Thyristor 1300 VDRM; 630 A rms ****************************

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FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V,

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GenX3TM 300V IGBTs IXGK400N30A3 IXGX400N30A3 Ultra-Low Vsat PT IGBTs for up to 10kHz Switching VCES = 300V IC25 = 400A VCE(sat) ≤ 1.15V TO-264 (IXG

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GenX3TM 300V IGBT IXGN400N30A3 Ultra-Low-Vsat PT IGBT for up to 10kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ

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Features  BVCEO > 300V  Ideal for Medium Power Amplification and Switching  Complementary PNP Type: MMBTA92  Totally Lead-Free & Fully RoHS Compli

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AD5300T 300V 5A Ultra Low VF Schottky Characteristics Summary Characteristics IF(AV) Values 5 VRRM VF @ 2.5A, TJ = 25℃ TJ, Operating Junction Tem

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FMMTA92 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features  BVCEO > -300V  IC = -200mA High Continuous Collector Current  Complementary Type – FMM

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FQP3N30 — N-Channel QFET® MOSFET FQP3N30 N-Channel QFET® MOSFET 300 V, 3.2 A, 2.2 Ω Description This N-Channel enhancement mode power MOSFET is produ

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Airflow Sensors Microbridge Mass Airflow/Amplified Figure 1 Heater control circuit FEATURES ɀ Laser trimmed for improved sensor interchangeability ɀ

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