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FDA59N30 - 300V N-Channel MOSFET
FDA59N30 — N-Channel UniFETTM MOSFET FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 .MUR6030NCA - 60A 300V Fast recovery diode
60A 300V Fast recovery diode 1 Description 60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passiv.SFA66UP30DN - 300V Ultrafast Dual Diode
SFA66UP30DN Ultrafast Dual Diode SFA66UP30DN 66A, 300V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: Trr=49ns (max) • Typical Forward Volt.FQA38N30 - 300V N-Channel MOSFET
FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features • 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V,.05N30 - 300V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 05N30 0.5A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 05N30 is a N-channel mode power MOSFET using UTC’s advanc.2MBI300VH-170-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 2MBI300VH-170-50 IGBT Modules IGBT MODULE (V series) 1700V / 300A / 2 in one package Features .FQP22N30 - 300V N-Channel MOSFET
QFET % % % % % % &'()**+,-* '.Ω/+-'*+ 0 1 23 4 01 2*.FFH30US30DN - 300V Stealth Diode
FFH30US30DN June 2003 FFH30US30DN 30A, 300V Stealth™ Diode General Description The FFH30US30DN is a Stealth™ diode optimized for low loss performanc.10N30 - 300V N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD 10N30 Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET usi.6MBP300VEA060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 6MBP300VEA060-50 IGBT Modules IGBT MODULE (V series) 600V / 300A / IPM Features • Temperature.2MBI300VB-060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 2MBI300VB-060-50 IGBT MODULE (V series) 600V / 300A / 2 in one package Features High speed swit.2MBI300VH-120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 2MBI300VH-120-50 IGBT MODULE (V series) 1200V / 300A / 2 in one package Features High speed swi.2MBI300VN-120-50 - IGBT
2MBI300VN-120-50 IGBT MODULE (V series) 1200V / 300A / 2 in one package IGBT Modules Features High speed switching Voltage drive Low Inductance modu.FQP3N30 - 300V N-Channel MOSFET
FQP3N30 — N-Channel QFET® MOSFET FQP3N30 N-Channel QFET® MOSFET 300 V, 3.2 A, 2.2 Ω Description This N-Channel enhancement mode power MOSFET is produ.FQP5N30 - 300V N-Channel MOSFET
QFET % % % % % % & '()**+,-* .Ω/+-0*+ 1 2 . 3 4 12 . &.