NP12N30G - 300V N-Channel Enhancement Mode MOSFET

NP12N30G Datasheet Preview — Preview of NP12N30G PDF

Datasheet Details

Part number	NP12N30G
Manufacturer	natLinear ↗
File Size	619.27 KB
Description	300V N-Channel Enhancement Mode MOSFET
Datasheet	NP12N30G-natlinear.pdf

NP12N30G Product details

Description

Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications.General

Features

VDS =300V，ID =12A RDS(ON)(Typ. )= 250mΩ @VGS=10V.
High density cell design for ultra low Rdson Marking and pin assignment.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

📁 NP12N30G Similar Datasheet

NP120N04NUK - N-Channel MOSFET (Renesas)
NP100N04NUJ - MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100N04PUK - MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100N055PUK - MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100P04PDG - MOS FIELD EFFECT TRANSISTOR (NEC)
NP100P04PLG - MOS FIELD EFFECT TRANSISTOR (NEC)
NP100P06PDG - P-channel Power MOSFET (Renesas)
NP100P06PLG - MOS FIELD EFFECT TRANSISTOR (NEC)

Other Datasheets by natlinear

NP12N04ER - 40V N-Channel Enhancement Mode MOSFET
NP120N03D6 - 30V N-Channel Enhancement Mode MOSFET
NP100P02D6 - 20V P-Channel Enhancement Mode MOSFET
NP1804MR - 18V Full-Bridge of MOSFET

Published: Jul 23, 2024 |