NP12N30G 300V N-Channel Enhancement Mode MOSFET

Description

NP12N30G 300V N-Channel Enhancement Mode MOSFET .
Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number: NP12N30G
Manufacturer: natlinear
File Size: 619.27 KB
Datasheet: NP12N30G-natlinear.pdf
Description: 300V N-Channel Enhancement Mode MOSFET

Features

* VDS =300V，ID =12A RDS(ON)(Typ. )= 250mΩ @VGS=10V
* High density cell design for ultra low Rdson Marking and pin assignment
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation Appli

NP12N30G Distributors

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NP12N30G 300V N-Channel Enhancement Mode MOSFET natlinear

natlinear NP12N30G-like datasheet