NP12N30G Datasheet, Mosfet, natlinear

NP12N30G Features

• Mosfet
• VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V
• High density cell design for ultra low Rdson Marking and pin assignment
• Fully characterized avalanche v

PDF File Details

Part number:

NP12N30G

Manufacturer:

natlinear

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619.27kb

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📄 Datasheet

Description:

300v n-channel enhancement mode mosfet. Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a

NP12N30G Application

• Applications General Features
• VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V
• High density cell design for ultra low Rdson

TAGS

NP12N30G

natlinear

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