* Super low on-state resistance RDS(on) = 1.95 mΩ MAX. (VGS = 10 V, ID = 60 A)
* Low Ciss: Ciss = 8300 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP120N04NUK-S18-AY
* 1 Pure Sn (
NP120N04NUK Datasheet (189.55 KB)
NP120N04NUK
189.55 KB
N-channel mosfet.
Preliminary Data Sheet NP120N04NUK 40 V 120 A N-channel Power MOS FET Application: Automotive R07DS1253EJ0100 Rev.1.00 Mar 30, 2.
📁 Related Datasheet
NP120N03D6 30V N-Channel Enhancement Mode MOSFET (natlinear)
NP12N04ER 40V N-Channel Enhancement Mode MOSFET (natlinear)
NP12N30G 300V N-Channel Enhancement Mode MOSFET (natlinear)
NP100N04NUJ MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100N04PUK MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100N055PUK MOS FIELD EFFECT TRANSISTOR (Renesas)
NP100P02D6 20V P-Channel Enhancement Mode MOSFET (natlinear)
NP100P04PDG MOS FIELD EFFECT TRANSISTOR (NEC)
NP100P04PLG MOS FIELD EFFECT TRANSISTOR (NEC)
NP100P06PDG P-channel Power MOSFET (Renesas)
