Part number:
NP100P04PLG
Manufacturer:
NEC
File Size:
210.90 KB
Description:
Mos field effect transistor.
NP100P04PLG Datasheet (210.90 KB)
* Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS =
* 10 V, ID =
* 50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS =
* 4.5 V, ID =
* 50 A)
* High current rating: ID(DC) = m100 A
* Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA =
NP100P04PLG Datasheet (210.90 KB)
NP100P04PLG
NEC
210.90 KB
Mos field effect transistor.
📁 Related Datasheet
NP100P04PDG - MOS FIELD EFFECT TRANSISTOR
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P04PDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P04PDG is P-channel M.
NP100P02D6 - 20V P-Channel Enhancement Mode MOSFET
(natlinear)
NP100P02D6
20V P-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP100P02D6 uses advanced trench technology to provide excellent .
NP100P06PDG - P-channel Power MOSFET
(Renesas)
NP100P06PDG
-60V – -100A – P-channel Power MOS FET Application : Automotive
Datasheet
R07DS1515EJ0100 Rev.1.00
Jun. 10, 2022
Description
This produc.
NP100P06PDG - MOS FIELD EFFECT TRANSISTOR
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P06PDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P06PDG is P-channel M.
NP100P06PLG - MOS FIELD EFFECT TRANSISTOR
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P06PLG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P06PLG is P-channel M.
NP100P06PLG - P-channel Power MOSFET
(Renesas)
NP100P06PLG
-60V – -100A – P-channel Power MOS FET Application : Automotive
Datasheet
R07DS1522EJ0100 Rev.1.00
Jun. 24, 2022
Description
This produc.
NP100N04NUJ - MOS FIELD EFFECT TRANSISTOR
(Renesas)
NP100N04NUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Description
The NP100N04NUJ is N-channel MOS Fi.
NP100N04PUK - MOS FIELD EFFECT TRANSISTOR
(Renesas)
NP100N04PUK
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0545EJ0100 Rev.1.00
Sep 23, 2011
Description
The NP100N04PUK is N-channel MOS Fi.
