NP109N04PUK

MOS FIELD EFFECT TRANSISTOR

Renesas

* Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A)

* Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V)

* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP109N04PUK-E1-AY ∗1 NP109N04PUK-E2-AY ∗1 Lead Plating Pur

NP109N04PUK

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Mos field effect transistor.

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NP109N04PUK MOS FIELD EFFECT TRANSISTOR Renesas

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