NP100N04PUK Datasheet - Renesas

MOS FIELD EFFECT TRANSISTOR

* Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A )

* Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V )

* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP100N04PUK-E1-AY ∗1 NP100N04PUK-E2-AY ∗1 Lead Plating

NP100N04PUK

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Mos field effect transistor.

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NP100N04PUK MOS FIELD EFFECT TRANSISTOR Renesas

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