NP109N04PUG Datasheet - Renesas

NP109N04PUG N-Channel Power MOSFET

The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP109N04PUG-E1-AY Note NP109N04PUG-E2-AY Note Pure Sn (Tin) Tape 800 p/reel Note Pb-free (This product does not contain Pb in exter.

NP109N04PUG Features

* Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)

* High current rating ID(DC) = ±110 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC =

NP109N04PUG-Renesas.pdf