NP100P06PDG - MOS FIELD EFFECT TRANSISTOR
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
NP100P06PDG Features
* Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS =
* 10 V, ID =
* 50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS =
* 4.5 V, ID =
* 50 A)
* High current rating: ID(DC) = m100 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V