NP100P06PDG Datasheet, Transistor, NEC

NP100P06PDG Features

• Transistor
• Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS =
• 10 V, ID =
• 50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS =
• 4.5 V, ID =
• 50 A)
• High

PDF File Details

Part number:

NP100P06PDG

Manufacturer:

NEC

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210.88kb

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📄 Datasheet

Description:

Mos field effect transistor. The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION

NP100P06PDG Application

• Applications ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY NP100P06PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/re

TAGS

NP100P06PDG

NEC

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