NP100P06PDG MOS FIELD EFFECT TRANSISTOR

NEC

Description

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET .
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

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Datasheet Specifications

Part number: NP100P06PDG
Manufacturer: NEC
File Size: 210.88 KB
Datasheet: NP100P06PDG_NEC.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS =
* 10 V, ID =
* 50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS =
* 4.5 V, ID =
* 50 A)
* High current rating: ID(DC) = m100 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V

NP100P06PDG Distributors

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NP100P06PDG MOS FIELD EFFECT TRANSISTOR NEC

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