Part number:
NP100N04NUJ
Manufacturer:
File Size:
211.19 KB
Description:
Mos field effect transistor.
* Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
* High current rating: ID(DC) = ±100 A
* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.
NP100N04NUJ Datasheet (211.19 KB)
NP100N04NUJ
211.19 KB
Mos field effect transistor.
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