NP100N04NUJ Datasheet - Renesas

MOS FIELD EFFECT TRANSISTOR

* Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)

* Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)

* High current rating: ID(DC) = ±100 A

* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No.

NP100N04NUJ

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Mos field effect transistor.

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