NP100N04NUJ MOS FIELD EFFECT TRANSISTOR

Renesas

Description

NP100N04NUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0364EJ0100 Rev.1.00 Jun 13, 2011 .
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Super low on-state resis.

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Datasheet Specifications

Part number: NP100N04NUJ
Manufacturer: Renesas ↗
File Size: 211.19 KB
Datasheet: NP100N04NUJ-Renesas.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
* Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
* High current rating: ID(DC) = ±100 A

NP100N04NUJ Distributors

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NP100N04NUJ MOS FIELD EFFECT TRANSISTOR Renesas

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