NP100P06PDG Datasheet, Mosfet, Renesas

NP100P06PDG Features

• Mosfet
• Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )
• Low input capacitance : Ciss = 1

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Part number:

NP100P06PDG

Manufacturer:

Renesas ↗

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1.33MB

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📄 Datasheet

Description:

P-channel power mosfet. This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features

Super low

NP100P06PDG Application

• Applications Features
• Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.

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NP100P06PDG

Renesas

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