NP120N03D6 - 30V N-Channel Enhancement Mode MOSFET
Schematic diagram The NP120N03D6 uses Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) .
This device is ideal for high-frequency s
NP120N03D6 Features
* VDS =30V，ID =120A RDS(ON)(Typ.)= 2.1mΩ @VGS=10V RDS(ON)(Typ.)= 2.9mΩ @VGS=4.5V
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* 100% UIS tested Marking and pin assignment Application
* Synchronus Rectification in DC/DC and AC/DC Converters
* Industrial a
