NP160N04TDG Datasheet - NEC

NP160N04TDG - SWITCHING N-CHANNEL POWER MOS FET

The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY NP160N04TDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263-7pin (MP-25ZT) typ. 1.5 g Note Pb-free (Thi.

NP160N04TDG Features

* Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A)

* High Current Rating ID(DC) = ±160 A

* Logic level drive type (TO-263-7pin) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain

NP160N04TDG_NEC.pdf