NP161N04TUG

N-CHANNEL POWER MOS FET

Renesas

NP161N04TUG Features

* Super low on-state resistance RDS(on) = 1.35 mΩ TYP. / 1.8 mΩ MAX. (VGS = 10 V, ID = 80 A)

* High Current Rating ID(DC) = ±160 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C

NP161N04TUG General Description

The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP161N04TUG-E1-AY Note NP161N04TUG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel Note Pb-free (This product does not contain Pb in the exte.

NP161N04TUG Datasheet (327.05 KB)