NP160N04TUK

MOS FIELD EFFECT TRANSISTOR

Renesas

* Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V, ID = 80 A )

* Low Ciss: Ciss = 7200 pF TYP. ( VDS = 25 V )

* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N04TUK-E1-AY ∗1 NP160N04TUK-E2-AY ∗1 Lead Plating

NP160N04TUK

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Mos field effect transistor.

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NP160N04TUK MOS FIELD EFFECT TRANSISTOR Renesas

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