NP160N04TUJ Datasheet, Transistor, Renesas

NP160N04TUJ Features

• Transistor
• Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
• Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive appli

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Part number:

NP160N04TUJ

Manufacturer:

Renesas ↗

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📄 Datasheet

Description:

Mos field effect transistor. The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features

Low on-

NP160N04TUJ Application

• Applications Features
• Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
• Low Ciss: Ciss = 6900 pF TYP. (VD

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NP160N04TUJ

Renesas

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