NP160N04TUJ

MOS FIELD EFFECT TRANSISTOR

Renesas

* Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)

* Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V)

* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N04TUJ -E1-AY ∗1 NP160N04TUJ -E2-AY ∗1 LEAD PLA

NP160N04TUJ

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Mos field effect transistor.

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NP160N04TUJ MOS FIELD EFFECT TRANSISTOR Renesas

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