NP160N04TUJ Datasheet - Renesas

NP160N04TUJ, MOS FIELD EFFECT TRANSISTOR

NP160N04TUJ MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0021EJ0100 Rev.1.00 Jul 01, 2010 .
The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Low on-state resistance.

NP160N04TUJ-Renesas.pdf

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Datasheet Details

Part number:

NP160N04TUJ

Manufacturer:

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File Size:

191.21 KB

Description:

MOS FIELD EFFECT TRANSISTOR

Features

* Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
* Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V)

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NP160N04TUJ MOS FIELD EFFECT TRANSISTOR Renesas

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