NP16N04YUG

MOS FIELD EFFECT TRANSISTOR

Renesas

* Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)

* Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V)

* Designed for automotive application and AEC-Q101 qualified

* Small size package 8-pin HSON Ordering Information Part No. NP16N04YUG-E1-AY

NP16N04YUG

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Mos field effect transistor.

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NP16N04YUG MOS FIELD EFFECT TRANSISTOR Renesas

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