NP16N04YUG MOS FIELD EFFECT TRANSISTOR

Renesas

Description

NP16N04YUG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0362EJ0100 Rev.1.00 Jun 13, 2011 .
The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Low on-state resistance ⎯.

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Datasheet Specifications

Part number: NP16N04YUG
Manufacturer: Renesas ↗
File Size: 213.42 KB
Datasheet: NP16N04YUG-Renesas.pdf
Description: MOS FIELD EFFECT TRANSISTOR

Features

* Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
* Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V)

NP16N04YUG Distributors

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NP16N04YUG MOS FIELD EFFECT TRANSISTOR Renesas

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