NP16N04YUG Datasheet, Transistor, Renesas

NP16N04YUG Features

• Transistor
• Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
• Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V)
• Designed for automotive applicat

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Part number:

NP16N04YUG

Manufacturer:

Renesas ↗

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📄 Datasheet

Description:

Mos field effect transistor. The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-s

NP16N04YUG Application

• Applications Features
• Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 8 A)
• Low Ciss: Ciss = 740 pF TYP. (VDS =

TAGS

NP16N04YUG

Renesas

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