NP160N055TUK

MOS FIELD EFFECT TRANSISTOR

Renesas

* Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS = 10 V, ID = 80 A)

* Low Ciss: Ciss = 7500 pF TYP. (VDS = 25 V)

* Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. NP160N055TUK-E1-AY

* 1 NP160N055TUK-E2-AY

* 1 Lead Plating Pure

NP160N055TUK

106.16 KB

Mos field effect transistor.

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NP160N055TUK MOS FIELD EFFECT TRANSISTOR Renesas

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