NP16N06QLK Dual N-Channel Power MOSFET

Renesas

Description

NP16N06QLK 60 V * 16 A * Dual N-channel Power MOS FET Application: Automotive Data Sheet R07DS1290EJ0200 Rev.2.00 May 24, 2018 Desc.
NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Super low on-state resista.

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Datasheet Specifications

Part number: NP16N06QLK
Manufacturer: Renesas ↗
File Size: 542.32 KB
Datasheet: NP16N06QLK-Renesas.pdf
Description: Dual N-Channel Power MOSFET

Features

* Super low on-state resistance  RDS(on)1 = 39 m MAX. (VGS = 10 V, ID = 8 A)  RDS(on)2 = 60 m MAX. (VGS = 4.5 V, ID = 4 A)
* Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)

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NP16N06QLK Dual N-Channel Power MOSFET Renesas

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