* Super low on-state resistance RDS(on)1 = 39 m MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 60 m MAX. (VGS = 4.5 V, ID = 4 A)
* Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)
* Designed for automotive application and AEC-Q101 qualified
* Small size package 8-pin HSON dual Outline Remark
NP16N06QLK Datasheet (542.32 KB)
NP16N06QLK
542.32 KB
Dual n-channel power mosfet.
NP16N06QLK 60 V 16 A Dual N-channel Power MOS FET Application: Automotive Data Sheet R07DS1290EJ0200 Rev. 2.00 May 24, 2018 Desc.
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