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FQA38N30 300V N-Channel MOSFET

FQA38N30 Description

FQA38N30 * N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQA38N30 Features

* 38.4 A, 300 V, RDS(on) = 85 mΩ (Max. ) @ VGS = 10 V, ID = 19.2 A
* Low Gate Charge (Typ. 90 nC)
* Low Crss (Typ. 70 pF)
* 100% Avalanche Tested

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