FQA38N30 Datasheet, mosfet equivalent, Fairchild Semiconductor

FQA38N30 Features

• Mosfet
• 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A
• Low Gate Charge (Typ. 90 nC)
• Low Crss (Typ. 70 pF)
• 100% Avalanche Tested

PDF File Details

Part number:

FQA38N30

Manufacturer:

Fairchild Semiconductor

File Size:

441.90kb

Download:

📄 Datasheet

Description:

300v n-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS techn

TAGS

FQA38N30

Fairchild Semiconductor

📁 Related Datasheet

FQA38N40 - 300V N-Channel MOSFET (Fairchild Semiconductor)

 
 
  QFET  % % % % % % &' () &**+ ,
 - * *'.Ω /+ - 0* + 1      2     3* 4 1   2    .

FQA30N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)

 
 
  QFET  $ $ $ $ $ $ %&' (&&) *
 + & ,(Ω -) + ,& ) .      /     0& 1 .   /     .

FQA32N20C - N-Channel MOSFET (Fairchild Semiconductor)
FQA32N20C — N-Channel QFET® MOSFET FQA32N20C N-Channel QFET® MOSFET 200 V, 32 A, 82 mΩ May 2014 Description This N-Channel enhancement mode power M.

FQA33N10 - 100V N-Channel MOSFET (Fairchild Semiconductor)
FQA33N10 April 2000 QFET FQA33N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are prod.

FQA33N10L - 100V LOGIC N-Channel MOSFET (Fairchild Semiconductor)
FQA33N10L September 2000 QFET FQA33N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transist.

FQA34N20 - 200V N-Channel MOSFET (Fairchild Semiconductor)

 
 
  QFET  & & & & & & '(% )**+ ,
 - * *./Ω 0+ - 1* + 2      3     4* 5 2   3     .

FQA34N20L - 200V LOGIC N-Channel MOSFET (Fairchild Semiconductor)
FQA34N20L June 2000 QFET FQA34N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors a.

FQA34N25 - 250V N-Channel MOSFET (Fairchild Semiconductor)
FQA34N25 October 2001 FQA34N25 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce.

FQA35N40 - 400V N-Channel MOSFET (Fairchild Semiconductor)

 
 
  QFET  $ $ $ $ $ $ %&' ())* +
 , ) -)&Ω .* , -) * /      0     --) 1 /   0    .

FQA36P15 - 150V P-Channel MOSFET (Fairchild Semiconductor)
FQA36P15 QFET FQA36P15 150V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using F.