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FQA38N30

300V N-Channel MOSFET

FQA38N30 Features

* 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A

* Low Gate Charge (Typ. 90 nC)

* Low Crss (Typ. 70 pF)

* 100% Avalanche Tested

* RoHS compliant August 2014 Description These N-Channel enhancement mode power field effect transistors are produ

FQA38N30 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQA38N30 Datasheet (441.90 KB)

Preview of FQA38N30 PDF

Datasheet Details

Part number:

FQA38N30

Manufacturer:

Fairchild Semiconductor

File Size:

441.90 KB

Description:

300v n-channel mosfet.

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FQA38N30 300V N-Channel MOSFET Fairchild Semiconductor

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